Each NAND flash cell is essentially a modified transistor, specifically a MOSFET (metal-oxide-semiconductor field-effect transistor) with an additional “floating gate” or, in modern 3D NAND, a charge trap layer. This isolated structure is sandwiched between insulating layers of oxide, allowing it to trap and retain electrical charge (electrons) even when power is off.
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巴罗介绍法方对当前中东局势的看法，强调法中同为联合国安理会常任理事国，对维护国际和平与安全负有特殊责任。美国、以色列对伊军事行动未征求联合国安理会意见，也未获安理会授权。各方当前要共同推动局势降级，通过谈判解决伊朗核等问题。中方同伊朗和海湾地区国家都保持良好关系，期待同中方一道，为推动地区局势缓和降温发挥积极作用。
People on social media claimed the offensive language in the alert was due to Google's use of generative AI, but the company said that was not the case.